 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TSM3460 20V N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22m (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30m (typ.) Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM3460CX6 Packing Tape & Reel 3,000/per reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Ta = 25 C Ta = 70 oC Pulsed Drain Current, VGS @4.5V Diode Forward Current Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junction and Storage Temperature Range TJ, TSTG o Symbol VDS VGS ID ID IDM Is PD Limit 20V 12 6 5 30 1.5 1.3 0.96 - 55 to +150 Unit V V A A A A W o C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=300uS, Duty < 2%. Symbol Rjf Rja Limit 35 120 Unit o o C/W C/W TSM3460 1-1 2003/12 rev. F Electrical Characteristics Tj = 25 oC unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage On-State Drain Current Forward Transconductance Conditions VGS = 0V, ID = 250uA VGS = 4.5V, ID = 6A VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 5A VDS = VGS, ID = 250uA VDS = 12V, VGS = 0V VDS = 12V, VGS = 0V, Tj = 60 C VGS = 12V, VDS = 0V VGS = 4.5V, VDS >= 5V VDS = 10V, ID = 6A VDS = 10V, ID = 6A, VGS = 4.5V VDD = 10V, RL = 10, ID = 1A, VGEN = 4.5V, RG = 6 VDS = 10V, VGS = 0V, f = 1.0MHz o Symbol Min 20 ---0.5 ---30 -------------- Typ -22 40 30 0.85 ----30 15.5 2 3.5 75 125 600 300 1336 220 130 -0.6 Max -30 50 40 -1.0 25 100 --30 --100 150 720 360 ---1.5 1.2 Unit V m m V uA nA A S BVDSS 25 oC 60 oC RDS(ON) RDS(ON) RDS(ON) VGS(TH) IDSS IGSS ID(ON) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS Dynamic * Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.5A, VGS = 0V A V VSD nC nS pF Note : * for design only, not subject to production tested. pulse test: pulse width <=300uS, duty cycle <=2% TSM3460 2-2 2003/12 rev. F Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM3460 3-3 2003/12 rev. F Electrical Characteristics Curve (continued) TSM3460 4-4 2003/12 rev. F SOT-26 Mechanical Drawing DIM A B C D E F H L SOT-26 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.70 3.00 0.106 0.118 0.25 0.50 0.010 0.020 1.90(typ) 0.075(typ) 0.95(typ) 0.037(typ) 1.50 1.70 0.059 0.067 1.05 1.35 0.041 0.053 2.60 3.00 0.102 0.118 0.60(typ) 0.024(typ) TSM3460 5-5 2003/12 rev. F |
Price & Availability of TSM3460CX6
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |